الرئيسية
» الرسائل والاطاريح
» تصمیم وبناء منظومة ترذیذ تعمل بالترددات الرادیویة وترسیب اغشیة SiO الرقیقة Design and Construction of Radio Frequency Sputtering System and Deposition of SiO2 Thin Films
تصمیم وبناء منظومة ترذیذ تعمل بالترددات الرادیویة وترسیب اغشیة SiO الرقیقة Design and Construction of Radio Frequency Sputtering System and Deposition of SiO2 Thin Films
رسالة متاحة للتحميل في علوم الفيزياء :
ــــــــــــــــــــــــــــــــــــــــــــــ
تصمیم وبناء منظومة ترذیذ تعمل بالترددات الرادیویة وترسیب اغشیة SiO الرقیقة
Design and Construction of Radio Frequency Sputtering System and Deposition of SiO2 Thin Films
لـ : ولید ابراھیم یاسین
دكتوراه في علوم الفيزياء
جامعة بغداد - كلية العلوم 2015
:
Abstract
In this work, RF
sputtering system has been successfully designed and constructed. This includes
two parts, chamber of system and RF power supply. The chamber of system
consists of two disks made from stainless steel, with diameter of 40 cm and
thickness of 2 cm. The cylinder wall of that made from quartz glass of diameter
of 30 cm and height of 40 cm. Sputtering target Si with a diameter of 7.62 cm
and thickness of 508 μm and represents the electrode. The substrate is fixed at the heater
and represents the grounded. The electrode gaps can be varied from 2 to 5cm. The
pressure is varied from 0.07 to 0.1 mbar.
The RF power supply
is designed and constructed and its diagram can be divided into six categories,
4 MHz crystal oscillator, Amplifier (Biploar push-pull) stage, IRF630 Class E
driver stage, IRFP540 Class E high power amplifier, resonator, and air core
transformer.
Electrical RF plasma
properties have been studied via studying the current, voltage curve, and
Paschen curves. The electrical RF plasma properties were studied at different
electrodes gap, gas pressure, and type gas where Argon and Oxygen gas is used
in this work. The adopted electrodes gap was 2cm and presser 0.1 mbar for Ar
gas. These optimum values use to study plasma parameters and to prepare the SiO2 thin
films.
For the purpose of
diagnostic RF plasma using two techniques, optical emission
spectroscopy (OES) and RF Langmuir probe is designed using a filter 4MHz
as compensation circuit. These techniques are used to determine electron
temperature, electron density, ion density, Debay length, number of particle in
Debay length, and frequency plasma. It was found that the electron temperature
decreases and the electron density increases with increasing the gas pressure,
while electron temperature decreases and electron density increases with
increasing electrode gaps for Argon and Oxygen gases.
III
The thickness of the
Si and SiO2 thin films was measured using spectral reflectance scale. We
have found that the thin film thickness increases with the time deposition.
Four ways are use for preparing SiO2 in
RF plasma technique and thin films thickness was measured for each way. We study the X-ray
diffraction in order to get information about the nature of the crystal
structure of SiO2 thin films that prepared by RF sputtering technology. In the first
way we obtained crystal cubic, in the second monoclinic crystal, in the third
monoclinic crystal, and in the fourth triclinic crystal. We measured the FTIR
transmittance spectra of the SiO2 thin films on glass
substrate were prepared by first way. The characteristic bands almost at 1085,
819 and 435 cm-1 are corresponding to stretching, bending and out of the plane of
Si-O bonds, respectively. The
optical properties are studied for SiO2 films
that grown on glass substrate this involve the transmission, refractive index,
absorption coefficient and the optical energy gap (Eg). The
Eg was found to be 2.75 eV and this value is attributed to impurities
that deposited on film.The morphological characteristic of the SiO2 thin
films was examined by atomic force microscope (AFM). The root mean square
roughness values (RMS) of the SiO2 thin
film prepared by first, second and fourth ways are from to be 6.12 nm, 0.75 nm
and 5.28 nm, respectively. According to the AFM results, the surface roughness
using second way becomes smoothes then that for using fourth and first ways
:
:
.
الاشتراك في:
تعليقات الرسالة
(
Atom
)
ليست هناك تعليقات :
إرسال تعليق